AOD254 150v n-channel mosfet v ds i d (at v gs =10v) 28a r ds(on) (at v gs =10v) < 46m w r ds(on) (at v gs =4.5v) < 53m w symbol the AOD254 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extremely low combination of r ds(on) and crss.in addition,switching behavior is well controlled with a soft recovery body diode.this dev ice is ideal for boost converters and synchronous rectifie rs for consumer, telecom, industrial power supplies and le d backlighting. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 150v g d s symbol v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-ambient a c/w r q ja 15 41 20 v 20 gate-source voltage drain-source voltage 150 units junction and storage temperature range -55 to 175 c thermal characteristics parameter typ max v maximum units parameter mj avalanche current c 3.6 continuous drain current 7 4.5 a 12 avalanche energy l=0.1mh c a t a =25c i dsm a t a =70c i d 28 20 t c =25c t c =100c 45 pulsed drain current c continuous drain current w power dissipation a p dsm w t a =70c 100 1.6 t a =25c t c =25c 2.5 50 t c =100c power dissipation b p d maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1 50 1.5 www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 150 v v ds =150v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.7 2.2 2.7 v i d(on) 45 a 37 46 t j =125c 74 90 40 53 m w g fs 55 s v sd 0.7 1 v i s 46 a c iss 2150 pf c oss 110 pf c rss 4 pf r g 2.3 w q g (10v) 27 40 nc q g (4.5v) 12 17 nc q gs 7 nc q gd 3 nc t d(on) 9 ns t 10 ns turn-on rise time v =10v, v =75v, r =3.75 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v gs =10v, v ds =75v, i d =20a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage reverse transfer capacitance v gs =0v, v ds =75v, f=1mhz v ds =v gs i d =250 m a v ds =0v, v gs =20v maximum body-diode continuous current g input capacitance output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a dynamic parameters v gs =4.5v, i d =20a r ds(on) static drain-source on-resistance diode forward voltage m w on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a gate-body leakage current t r 10 ns t d(off) 29 ns t f 4 ns t rr 51 ns q rr 434 nc turn-on rise time turn-off delaytime v gs =10v, v ds =75v, r l =3.75 w , r gen =3 w turn-off fall time i f =20a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/6 AOD254 150v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 20 30 40 50 60 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1.2 1.6 2 2.4 2.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.5v 4v 6v 10v 4.5v 5v 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/6 AOD254 150v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 2400 0 25 50 75 100 125 150 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- c oss c rss v ds =75v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =1.5 c/w www.freescale.net.cn 4/6 AOD254 150v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 14: current de - rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 1 10 100 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =50 c/w www.freescale.net.cn 5/6 AOD254 150v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 6/6 AOD254 150v n-channel mosfet
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